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Teilenummer	GT100DA120U

Bauteilbeschribung	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

Filegröße	177.73 Kbytes

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Hersteller	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Ähnliche Beschreibung - GT100DA120U

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	GT100DA60U	175Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Revision: 22-Jul-10
	GT100DA60U	178Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12
	VS-GT100DA120U	176Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12
	VS-GT180DA120U	187Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 180 A 01-Jan-2022
	VS-GT80DA120U	186Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 80 A 01-Jan-2022
	VS-GT140DA60U	189Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 140 A 01-Jan-2023
	VS-GT80DA120U	185Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 80 A 01-Jan-2023
	VS-GT140DA60U	295Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 140 A Revision: 31-May-16
	VS-GT140DA60U	190Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 140 A 01-Jan-2022
	VS-GT200SA60UP	176Kb / 8P	Insulated Gate Bipolar Transistor (Trench IGBT), 200 A 01-Jan-2023