SPN6099 pdf, SPN6099 Bauteilbeschribung, SPN6099 Datenblatt, SPN6099 view ::: ALLDATASHEET :::

Teilenummer	SPN6099

Bauteilbeschribung	N-Channel MOSFET uses advanced trench technology

Filegröße	973.97 Kbytes

Html View	1 2 3 4

Hersteller	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

Logo

Ähnliche Teilenummer - SPN6099

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
SYNC POWER Crop.	SPN6099	215Kb / 8P	N-Channel Enhancement Mode MOSFET
SYNC POWER Crop.	SPN6099T220TGB	215Kb / 8P	N-Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	SPN6099T220TGB	1Mb / 8P	N-Channel 60 V (D-S) MOSFET

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
SHENZHEN DOINGTER SEMIC...	DC006NG	827Kb / 4P	N-Channel MOSFET uses advanced trench technology
	DC022NG	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	FH070NR	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	CJP07N65	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	CEP93A3	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	CJPF12N65	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	CJU50N06	1,014Kb / 4P	N-Channel MOSFET uses advanced trench technology
	APM2055NU	965Kb / 5P	N-Channel MOSFET uses advanced trench technology
	APM4030BNU	635Kb / 5P	N-Channel MOSFET uses advanced trench technology
	DKI06261	887Kb / 4P	N-Channel MOSFET uses advanced trench technology
	STP454	1Mb / 5P	N-Channel MOSFET uses advanced trench technology